Passive and active membrane properties of MSNs, TANs, and PLTS interneurons
MSN | TAN | PLTS* | |
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Passive membrane properties | |||
Ra, MΩ | 14.0 ± 0.7 (114) | 20.8 ± 0.7 (34) | 15.9 ± 1.4 (10) |
Rm, MΩ | 139.3 ± 15.1 (114) | 337.2 ± 22.3 (50) | 693.6 ± 82.6 (10) |
Cm, pF | 108.9 ± 4.6 (114) | 113.0 ± 5.1 (50) | 38.6 ± 4.5 (10) |
RMP, mV | -73.2 ± 2.2 (14) | -57.8 ± 1.1 (50) | -58.6 ± 2.3 (15) |
AP properties | |||
#APs | 5.6 ± 0.8 (14) | 14.4 ± 1.1 (50) | 9.9 ± 1.2 (14) |
Amplitude, mV | 77.7 ± 3.3 (14) | 59.6 ± 2.3 (50) | 41.5 ± 1.8 (14) |
AP half-width, ms | 0.8 ± 0.1 (14) | 2.5 ± 0.1 (50) | 1.7 ± 0.1 (14) |
AHP, mV | -11.1 ± 0.8 (14) | -8.2 ± 0.6 (50) | -7.1 ± 0.5 (14) |
Input current at threshold, pA | 368 ± 29 (14) | 107 ± 18 (50) | 25 ± 4 (14) |
Threshold, mV | -34.4 ± 0.7 (14) | -45.4 ± 1.6 (50) | -35.7 ± 1.4 (14) |
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Properties of TANs are compared with MSNs and with persistent low-threshold spike (PLTS) striatal interneurons that can be spontaneously active in cell-attached configuration. Compared with PLTS cells, TANs have a lower membrane resistance (Rm), higher membrane capacitance (Cm), and longer action potential duration (AP) half-width. Values are means ± SE. Group n is shown in parentheses. Ra indicates access resistance; RMP, resting membrane potential; #APs, number of action potentials counted over 400 ms at the third trace exhibiting Aps; AHP, afterhyperpolarization potential.
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↵*Data for PLTS cells were obtained from Wang et al., 2013.